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| 2SK1301 Silicon N-Channel MOS FET Application TO-220AB High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 100 20 15 60 15 50 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1301 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 100 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 7 -- -- -- -- -- -- -- -- -- -- -- 0.10 0.13 11 860 340 100 10 70 180 100 1.3 10 250 2.0 0.13 0.18 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 15 A, VGS = 0 IF = 15 A, VGS = 0, diF/dt = 50 A/s ID = 8 A, VGS = 10 V, RL = 3.75 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------- --------------------- ID = 8 A, VGS = 4 V * ID = 8 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 250 -- ns -------------------------------------------------------------------------------------- 2SK1301 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 100 Maximum Safe Operation Area ) s ot C) 10 Sh 25 s (1 = 0 s 10 m (T C 10 n = ratio PW Ope C D 30 Drain Current ID (A) 40 10 3 1 1 m s 20 0 50 100 Case Temperature TC (C) 150 0.3 Operation in this area Ta = 25C is limited by RDS (on) 0.1 10 1 3 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V 4V 7V 16 Drain Current ID (A) 3.5 V Drain Current ID (A) 16 Pulse Test 20 Typical Transfer Characteristics VDS = 10 V Pulse Test 12 3V 8 12 8 75C TC = 25C -25C 4 2.5 V VGS = 2 V 4 0 4 8 12 16 20 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 2SK1301 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 2.5 Drain to Source Saturation Voltage VDS (on) (V) 20 A 2.0 Pulse Test 10 A 1.0 ID = 5 A 0.5 0.5 0.2 0.1 0.05 Static Drain to Source on State Resistance vs. Drain Current VGS = 4 V 10 V 1.5 0.02 Pulse Test 0.01 0.005 1 2 5 10 20 50 Drain Current ID (A) 100 0 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () ID = 20 A Pulse Test Forward Transfer Admittance yfs (S) 0.5 50 Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test -25C TC = 25C 75C 0.4 20 10 5 2 1 0.3 VGS = 4 V 0.2 10 A 5A 20 A 10 A 5A 0.1 VGS = 10 V 0 -40 0 40 120 80 Case Temperature TC (C) 160 0.5 0.2 0.5 10 1.0 5 2 Drain Current ID (A) 20 2SK1301 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 10000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) 1000 Ciss Coss 100 Crss 200 100 50 20 10 5 0.2 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) VDD = 25 V 50 V VDS 80 V VDD = 80 V 60 50 V 40 8 12 20 Gate to Source Voltage VGS (V) 16 VGS 500 200 100 Switching Characteristics td (off) Switching Time t (ns) 80 tf 50 tr td (on) VGS = 10 V PW = 2s, duty < 1 % 0.5 2 1 5 10 Drain Current ID (A) 20 20 10 5 0.2 20 25 V 0 20 40 60 80 Gate Charge Qg (nc) ID = 15 A 4 0 100 2SK1301 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) 16 Pulse Test 12 10 V 8 4 5V VGS = 0, -5 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 TC = 25C 0.03 ul 1 0.0 hot P S 1 se ch-c (t) = s (t) * ch-c ch-c = 2.5C/W, TC = 25C PDM D =PW T PW T 1m 10 m Pulse Width PW (s) 100 m 1 10 0.01 10 100 2SK1301 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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